Gain in injection lasers based on self-organized quantum dots |
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Authors: | A R Kovsh A E Zhukov A Yu Egorov V M Ustinov N N Ledentsov M V Maksimov A F Tsatsul’nikov P S Kop’ev |
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Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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Abstract: | The analytical form of the dependence of the gain on pump current density for lasers with an active region based on self-organized
quantum dots is derived in a simple theoretical model. The proposed model is shown to faithfully describe experimental data
obtained for laser diodes based on InGaAs quantum dots in an AlGaAs/GaAs matrix, as well as InAs quantum dots in an InGaAs/InP
matrix. The previously observed gain saturation and switching of the lasing from the ground state to an excited state of the
quantum dots are studied. The influence of the density of quantum-dot arrays on the threshold characteristics of lasers based
on them is examined on the basis of this model.
Fiz. Tekh. Poluprovodn. 33, 215–223 (February 1999) |
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