|
|||||
|
|
Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition |
|
| Authors: | Tetsuya Ikuta Yuki Miyanami Hayato Iwamoto Takayoshi Shimura Kiyoshi Yasutake |
| Affiliation: | a Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan b Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan |
| Abstract: | Selective epitaxial Si with a high arsenic concentration of 2.2×1019 atoms/cm3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride. |
| Keywords: | As Si Atmospheric pressure Chemical vapor deposition In situ doping Selective epitaxial growth Raised extension Segregation Etching |
| 本文献已被 ScienceDirect 等数据库收录！ | |
