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基于激光多普勒技术的PZT薄膜压电性能测试研究
引用本文:许晓慧,鲁健,朱龙洋,褚家如.基于激光多普勒技术的PZT薄膜压电性能测试研究[J].光学精密工程,2005,13(6):658-663.
作者姓名:许晓慧  鲁健  朱龙洋  褚家如
作者单位:中国科学技术大学,精密机械与精密仪器系,安徽,合肥,230027
基金项目:教育部博士点基金(No.20030358018)和优秀青年教师资助计划项目.
摘    要:应用基于激光多普勒技术的微小形变分析方法,并引入数字锁相技术,成功实现了PZT(Pb(Zr,Ti)O3)铁电薄膜的压电性能测试。对商用压电陶瓷在小信号激励下的压电性能测试表明,数字锁相技术的引入能有效抑制系统噪声,并提高激光多普勒系统的位移检测分辨率,使其达到皮米量级。此外,研究了用溶胶-凝胶技术和溶胶-电雾化技术制备得到的PZT薄膜的电压-位移曲线和压电位移"蝴蝶线",实验结果表明:在5 V直流偏置下测得两种方法制备得到的PZT薄膜的d33压电系数分别为218.7 pC/N和215.8 pC/N,相应的标准偏差分别为12.7和28.6。

关 键 词:PZT铁电薄膜  激光多普勒技术  数字锁相
文章编号:1004-924X(2005)06-0658-06
收稿时间:2005-08-09
修稿时间:2005-09-01

Measurement of piezoelectric properties of PZT films by laser Doppler technique
XU Xiao-hui,LU Jian,ZHU Long-yang,CHU Jia-ru.Measurement of piezoelectric properties of PZT films by laser Doppler technique[J].Optics and Precision Engineering,2005,13(6):658-663.
Authors:XU Xiao-hui  LU Jian  ZHU Long-yang  CHU Jia-ru
Affiliation:Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, He f ei 230027,China
Abstract:Laser Doppler technique was used to measure the piezoelectric properties of PZT((Pb(Zr,Ti)O_3)) thin films.The measurement of piezoelectric properties on commercial PZT bulk indicated that the introduction of lock-in technique,which offered excellent noise rejection,raised the displacement resolution up to picometer order.Then experiments were performed on PZT films derived by sol-gel method and Electrical Spray Deposition(ESD) method.The obtained results show that the piezoelectric coefficients(d_(33)) of the two films are 218.7 pC/N and 215.8 pC/N respectively,with 5 V dc bias,and the corresponding standard deviations are 12.7 and 28.6.
Keywords:PZT thin film  laser Doppler technique  digital lock-in
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