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| HgCdTe MIS器件的制备及其界面电学特性的研究(下) | |
| 引用本文： | 何波,史衍丽,徐静.HgCdTe MIS器件的制备及其界面电学特性的研究(下)[J].红外,2007,28(1):17-20. |
| 作者姓名： | 何波 史衍丽 徐静 |
| 作者单位： | 1. 昆明理工大学光电子新材料研究所,昆明,650051;昆明物理研究所,昆明,650223 2. 昆明物理研究所,昆明,650223 3. 济南大学材料学院,济南,250022 |
| 摘 要： | 介绍了用高、低频组合电容法测量HgCdTe MIS器件钝化层界面态密度能量分布的基本原理和步骤．研究表明,自身阳极硫化 单层ZnS对HgCdTe的表面钝化已经达到光伏焦平面器件表面钝化的各项要求． |
| 关 键 词： | HgCdTe MIS器件 表面钝化 界面电学特性 |
| 文章编号： | 1672-8785（2007）01-0017-04 |
| 修稿时间： | 2006-06-19 |
Fabrication of HgCdTe MIS Device and Study of Interface Electrical Characteristics of Passivation Films on It (Ⅱ) |
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| HE Bo,SHI Yan-li,XU Jing.Fabrication of HgCdTe MIS Device and Study of Interface Electrical Characteristics of Passivation Films on It (Ⅱ)[J].Infrared,2007,28(1):17-20. | |
| Authors: | HE Bo SHI Yan-li XU Jing |
| Abstract: | The basic principle and steps to measure the interface state density energy distribution of the passivation films in HgCdTe MIS devices by a low and high frequency capacitance combination technology are presented. The study has indicated that the passivation films of self-anodic sulfidization ZnS have met all of the surface passivation requirements of the PV HgCdTe focal plane array (FPA) devices. |
| Keywords: | HgCdTe MIS device surface passivation interface electrical characteristics |
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