| InGaAs（P）／InP应变量子阱和超晶格的光电性质 |
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| 引用本文： | 刘宝林,陈松岩.InGaAs（P）／InP应变量子阱和超晶格的光电性质[J].半导体光电,1998,19(5):300-303. |
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| 作者姓名： | 刘宝林 陈松岩 |
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| 作者单位： | 厦门大学 |
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| 摘 要： | 利用低压金属有机化合物化学汽相沉积（ＭＯＣＶＤ）生长技术在ＩｎＰ衬底上生长ＩｎＧａＡｓ／ＩｎＰ应变量子阱，超晶格和ＩｎＧａＡｓＰ／ＩｎＰ量子阱结构材料，利用７７Ｋ光荧光（ＰＬ）测量这一应变量了阱和量子阱的光学性质，利用双晶Ｘ光测量应变超晶格的性质。
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| 关 键 词： | 化合物半导体 MOCVD 应变量子阱 超晶格 |
Optoelectronic characteristics of InGaAs (P)/InP strained quantum well and superlattice |
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| LIU Baolin CHEN Songyan CHEN Longhai CHEN Chao.Optoelectronic characteristics of InGaAs (P)/InP strained quantum well and superlattice[J].Semiconductor Optoelectronics,1998,19(5):300-303. |
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| Authors: | LIU Baolin CHEN Songyan CHEN Longhai CHEN Chao |
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| Abstract: | InGaAs/InP strained quantum well and superlattice,and InGaAsP quantum well were grown on InP substrate by low-pressure metal organic vapor deposition (LP-MOCVD). The optical characteristics of the strained quantum well and quantum well were studied by photoluminescent (PL) at 77 K, while the characteristics of InGaAs/InP strained superlattice are measured by X-ray double crystal diffraction. |
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| Keywords: | Semiconductor Compound MOCVD Strained Quantum Well Superlattice |
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