Area preferential nucleation of Ge nano-dots on nano-size porous silicon |
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Authors: | Jingyun Huang Zhizhen YeHaiyan Zhang Xianfeng Ni |
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Affiliation: | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China |
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Abstract: | The Ge quantum dots on anodized nanometer porous silicon layers are prepared by area preferential nucleation at a low temperature of 720°C. The porous silicon was formed by anodic conversion of p-type (1 0 0)-oriented crystalline silicon in hydrofluoric acid diluted by alcohol. Clear phonon-resolved PL, as a NP transition and its TA phonon replica, was observed from the Ge dots at the temperature of 10 K. We attributed the very large blue-shift in energy of the PL peak to the quantum size effect in Ge dots. The present technique is a potential low-cost method for producing quantum dot arrays. |
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Keywords: | A Nanostructure B Vapor deposition C Atomic force microscopy D Crystal structure |
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