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离子注入能量对深结扩散表面浓度的影响
引用本文:沈怡东,钱清友.离子注入能量对深结扩散表面浓度的影响[J].数字通信世界,2022(2).
作者姓名:沈怡东  钱清友
作者单位:捷捷半导体有限公司
摘    要:采用离子注入对半导体器件的进行掺杂,能实现精确掺杂,在半导体器件制程过程中起着举足轻重的作用。文章主要探讨相同注入剂量,不同离子注入硼与磷的能量,对于深结扩散后表面浓度的影响,从而得到较理想的工艺注入能量,以便提升注入机设备效率及产品深结扩散后的浓度稳定性,并在深结扩散器件中得到有效的利用,取得较理想的效果。

关 键 词:离子注入  能量  表面浓度  R口

Effect of Ion Implantation Energy on Surface Concentration of Deep Junction Diffusion
SHEN Yidong,QIAN Qingyou.Effect of Ion Implantation Energy on Surface Concentration of Deep Junction Diffusion[J].Digital Communication World,2022(2).
Authors:SHEN Yidong  QIAN Qingyou
Affiliation:(Jiejie Semiconductor Co.,Ltd.,Nantong,226200,China)
Abstract:Because the computer network has certain open characteristics,there will be some hidden dangers of disclosure in the application process,which will pose a serious threat to the interests of the society,the state and individuals to a certain extent.This paper first analyzes the importance of computer network security protection,and then explores the main hidden dangers of leakage and relevant preventive measures in computer network application,hoping to provide necessary reference for the effective development of computer network security protection.
Keywords:ion implantation  energy  surface concentration  R port
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