| 异质外延GaN中穿透位错对材料发光效率的影响 |
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| 引用本文： | 高志远,郝跃,李培咸,张进城.异质外延GaN中穿透位错对材料发光效率的影响[J].半导体学报,2008,29(3):521-525. |
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| 作者姓名： | 高志远 郝跃 李培咸 张进城 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展规划(973计划) |
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| 摘 要： | 用阴极射线致发光(CL)法、透射电子显微镜(TEM)和X射线衍射(XRD)法研究了异质外延GaN材料的发光性质与结构特性的关系.结果表明,GaN外延层中的穿透位错是材料有效的非辐射复合中心,但GaN的CL带边峰强度并不随位错密度的增加而减少.两步法生长GaN形成的马赛克结构的亚晶粒尺寸和晶粒间合并产生的位错的弯曲程度是影响材料发光效率的关键.
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| 关 键 词： | GaN 穿透位错 非辐射复合 发光效率 |
| 文章编号： | 0253-4177(2008)03-0521-05 |
| 收稿时间： | 8/28/2007 8:47:36 AM |
| 修稿时间： | 2007年8月28日 |
Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers |
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| Gao Zhiyuan,Hao Yue,Li Peixian and Zhang Jincheng.Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers[J].Chinese Journal of Semiconductors,2008,29(3):521-525. |
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| Authors: | Gao Zhiyuan Hao Yue Li Peixian and Zhang Jincheng |
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| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China |
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| Abstract: | We study the relationship between microstructure and luminescence efficiency for GaN heteroepitaxial films by cathodoluminescence (CL),transmission electron microscopy,and X-ray diffraction.Even though threading dislocations in GaN epitaxial layers have been demonstrated to be effective nonradiative recombination centers,the CL band edge peak intensity does not decrease as the dislocation density increases.The luminescence efficiency of GaN is found to be affected both by the grain size of the mosaic structural GaN formed by two-step growth and by the bend extent of dislocations formed during the coalescence of sub-grains. |
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| Keywords: | GaN threading dislocation nonradiative recombination luminescence efficiency |
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