A high efficiency GaAs MCM power amplifier for 1.9 GHz digitalcordless telephones |
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| Authors: | Makioka S Yoshikawa N Kanazawa K |
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| Affiliation: | Electron. Res. Lab., Matsushita Electron. Corp., Osaka; |
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| Abstract: | A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P1dB of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the multilayer MCM structure, i.e., multilayer microwave integrated circuits (MuMIC), and on-chip ferroelectric capacitors successfully reduced the GaAs total chip area to be 1.1 mm2. We consider that the MuMIC is the most effective candidate for high frequency circuits |
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