| 基于硅带隙能量的1.2V基准电压源设计 |
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| 引用本文： | 冯超,汪金辉,万培元,侯立刚.基于硅带隙能量的1.2V基准电压源设计[J].中国科技论文在线,2014(4):400-402,416. |
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| 作者姓名： | 冯超 汪金辉 万培元 侯立刚 |
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| 作者单位： | 北京工业大学电子信息与控制工程学院,北京100124 |
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| 基金项目： | 高等学校博士学科点专项科研基金资助项目（20121103120018）;国家自然科学基金资助项目（61204040,60976028）;北京市自然科学基金资助项目（4123092）;北京市教育委员会科技计划项目（JC002999201301） |
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| 摘 要： | 基于0.35μm CSMC(central semiconductor manufacturing corporation)工艺设计,并流片了一款典型的带隙基准电压源芯片,可输出不随温度变化的高精度基准电压。电路包括核心电路、运算放大器和启动电路。芯片在3.3V供电电压,-40~80℃的温度范围内进行测试,结果显示输出电压波动范围为1.212 8~1.217 5V,温度系数为3.22×10-5/℃。电路的版图面积为135μm×236μm,芯片大小为1mm×1mm。
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| 关 键 词： | 基准电压源 温度系数 基准电压 |
CMOS 1.2 V bandgap voltage reference design |
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| Feng Chao,Wang Jinhui,Wan Peiyuan,Hou Ligang.CMOS 1.2 V bandgap voltage reference design[J].Sciencepaper Online,2014(4):400-402,416. |
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| Authors: | Feng Chao Wang Jinhui Wan Peiyuan Hou Ligang |
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| Affiliation: | (College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China) |
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| Abstract: | A typical bandgap voltage reference based on a 0.35 μm CSMC CMOS technology is designed and fabricated.The over-all bandgap architecture is optimized to achieve high-accuracy temperature-independent voltage reference.The design consists of a bandgap core circuit,an op-amp,and a start-up circuit.The test results show that the bandgap reference circuit provides refer-ence voltage from 1.212 8 to 1.217 5 V with 3.3 V power supply when temperature ranges from -40 to 80 ℃,and the tempera-ture coefficient is 32.2×10-5/℃.The total layout area including dummy structures is 135 μm×236 μm,and the die area is 1 mm×1 mm. |
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| Keywords: | bandgap temperature coefficient voltage reference |
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