| 金属有机化学气相沉积法制备Al掺杂ZnO透明导电膜 |
| |
| 引用本文： | 谢春燕,张跃.金属有机化学气相沉积法制备Al掺杂ZnO透明导电膜[J].硅酸盐学报,2010,38(1). |
| |
| 作者姓名： | 谢春燕 张跃 |
| |
| 作者单位： | 北京航空航天大学材料学院,空天材料与服役教育部重点实验室,北京,100191 |
| |
| 摘 要： | 采用自行开发的金属有机化学气相沉积(metal organic chemical vapor deposition,MOCVD)法,以乙酰丙酮锌和乙酰丙酮铝分别为锌源和铝源,以氮气为载气,在玻璃衬底上制备Al掺杂ZnO(Al-doped ZnO,ZAO)薄膜。通过改造MOCVD设备提高制备薄膜的稳定性和均匀性,研究了基片温度、载气流量、水蒸气等沉积条件对薄膜结构,沉积速率及其光、电性能的影响。用扫描电子显微镜、X射线衍射、紫外-可见分光光度计和四探针双电测电阻仪分别观察薄膜形貌结构,并测试其光、电性能。结果表明:薄膜为均匀、致密的纳米多晶薄膜,具有六角纤锌矿结构,且呈c轴择优取向生长;薄膜的(002)衍射峰与纯ZnO相比向低角度方向偏移,表明Al进入了ZnO晶格,并导致晶格膨胀;薄膜的紫外-可见光谱透过率在85%以上;电阻率最小可达10-4??cm。
|
| 关 键 词： | 金属有机化学气相沉积 铝掺杂氧化锌 透明导电薄膜 |
TRANSPARENT CONDUCTIVE ALUMINIUM-DOPED ZINC OXIDE FILM PREPARED BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION METHOD |
| |
| XIE Chunyan,ZHANG Yue.TRANSPARENT CONDUCTIVE ALUMINIUM-DOPED ZINC OXIDE FILM PREPARED BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION METHOD[J].Journal of The Chinese Ceramic Society,2010,38(1). |
| |
| Authors: | XIE Chunyan ZHANG Yue |
| |
| Affiliation: | Key Laboratory of Aerospace Materials and Performance of Ministry of Education;School of Materials Science and Engineering;Beihang University;Beijing 100191;China |
| |
| Abstract: | Aluminium-doped zinc oxide (ZAO) films were prepared on a glass substrate by a self-designed metal organic chemical vapor deposition (MOCVD) method.Zn(C5H7O2)2.H2O and Al(C5H7O3)3 were used as zinc source and aluminum source respectively,and nitrogen was used as a carrier gas.The improvement of the MOCVD equipment could optimize the stability and uniformity of films.The effects of substrate temperature,carrier gas flow rate and water vapor on the structural,optical,electrical properties and deposition rate ... |
| |
| Keywords: | metal organic chemical vapor deposition aluminium doped zinc oxide transparent conductive film |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
