| 注F~+加固CMOS/SOI材料的抗辐射研究 |
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| 引用本文： | 武光明,朱江,高剑侠.注F~+加固CMOS/SOI材料的抗辐射研究[J].电子元件与材料,2002,21(2):28-29. |
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| 作者姓名： | 武光明 朱江 高剑侠 |
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| 作者单位： | 1. 北京石油化工学院,北京,102600
2. 中国科学院上海原子核研究所,上海,201800 |
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| 摘 要： | 向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,材料的抗辐照能力较强。这对制作应用于电离辐射环境的COMS/SOI器件极其有益。
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| 关 键 词： | CMOS/SOI材料 抗辐射 加固 |
| 文章编号： | 1001-2028(2002)02-0028-02 |
Study on Anti-ionization Radiation in Injecting F+ into COMS/SOI Materials |
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| WU Guang-ming,ZHU Jiang,GAO Jian-xia.Study on Anti-ionization Radiation in Injecting F+ into COMS/SOI Materials[J].Electronic Components & Materials,2002,21(2):28-29. |
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| Authors: | WU Guang-ming ZHU Jiang GAO Jian-xia |
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| Affiliation: | WU Guang-ming1,ZHU Jiang1,GAO Jian-xia2 |
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| Abstract: | CMOS/SOI materials are prepared by injecting 170 keV F+ into SiO2 burying layers or Si/SiO2 interface of SIMOX material. The CMOS/SOI materials are radiated with 60Cog radiating device and their I-V characters are measured. The result shows that the anti-ionization radiation performances increase when F+ injected into the burying layers of CMOS/SOI materials. Furthermore, the performances of the material become much stronger when the dose of F+ is 11015cm-2. This is greatly beneficial to CMOS/SOI devices used in ionization radiation environment. |
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| Keywords: | CMOS/SOI materials anti-ionization radiation reinforce |
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