| Effect of oxygen pressure on electrical transport properties for （110） oriented La2/3Sr1/3MnO3 films directly deposited on silicon |
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| 引用本文： | 李廷先,李扩社,于敦波,张飞鹏,张铭,于凤军.Effect of oxygen pressure on electrical transport properties for （110） oriented La2/3Sr1/3MnO3 films directly deposited on silicon[J].中国稀土学报(英文版),2013,31(4):376-380. |
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| 作者姓名： | 李廷先 李扩社 于敦波 张飞鹏 张铭 于凤军 |
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| 作者单位： | [1]College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China; [2]Natianal Engineering Research Centerjbr Rare earth Materials, General Research Institute for Nonferrous Metals, Grirem Advanced Materials Co., Ltd., Beijing 100088, China [3]Department of Mathematics and Physics, Henan University of Urban Construction, Pingdingshan 467036, China [4]College of Materials Science and Engineering, Beijing University of Tech- nology, Beijing 100124, China |
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| 基金项目： | Project supported by National Natural Science Foundation of China （51002013, 11174201）, Natural Science Foundation of Beijing Municipal （2122007）, Science and Technology Research Projects of Education Department of Henan province （13B430895） |
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| 摘 要： | La2/3Sr1/3MnO3 films with(110) preferred orientation were deposited on Si(100) substrate without any buffer layer by pulsed laser deposition technique.Effect of oxygen pressure on orientation,surface morphology,and electrical transport properties were investigated.The film deposited at 10 Pa presented(110) preferred orientation with the best crystalline quality,the largest grain size,and the smallest roughness.The(110) oriented film presented higher metal-insulator transition temperature,and the lower resistivity than that of the samples without preferred orientation.
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| 关 键 词： | colossal magnetoresistive film LSMO pulsed laser deposition electrical transport rare earths |
| 收稿时间： | 10 December 2012 |
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