AlGaAs／GaAs HBT基区电流的研究

在ALGaAs/GaAs HBT E-M模型直流参数的研究基础上，对HBT的基区电流进行了研究，特别是针对BE结空间电荷区的复合电流和基区表面复合电流，因为在HBT的小偏置情况下，HBT的BE结空间电荷区的复合电流和基区表面复合电流在整个基区电流中占有主导地位。当BE结间外加电压为0.5-1.2V时，ALGaAs HBT的基区电流的计算机模拟值和测试值比较接近，这一研究结果有助于进一步了解HBT的直流特性和1/?噪声特性。

Base Current in the AlGaAs/GaAs HBT

Based on the studying of the AlGaAs/GaAs HBT E M model DC parameters which we have done, the base currents of the HBT are studied, and especially, the B E junction space charge region(SCR) recombination currents and the base surface recombination currents are calculated, which are important components of the base currents at a small DC base. When V be is based between 0.5- 1.2V , the calculations are concordant with the measurements. The result is aided to know the HBT DC characteristics further and to study 1/f noise in the HBT.