Electrical characteristics of MOSFETs using low-pressurechemical-vapor-deposited oxide

The electrical characteristics of MOSFETs and MOS capacitors utilizing thin (80-230 Å) low-pressure chemical-vapor-deposited (LPCVD) oxide films deposited at 12 Å/min are presented. MOSFETs using CVD oxides show good electrical characteristics with 70-90% of the surface mobility of conventional MOSFETs. The CVD oxides exhibit the same low leakage current and high breakdown fields as the thermal oxides, and significantly lower trapping and trap generation rates than thermally grown oxides. Interface state densities of ⩽3×10¹⁰ cm^-2 eV^-1 are obtained from CVD devices by using a short annealing in oxygen ambient following the deposition. These results indicate that these LPCVD oxide films may be promising dielectrics for MOS device application