| 氧化锡薄膜场致发射研究 |
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| 引用本文： | 林金阳,王灵婕,张永爱,郭太良.氧化锡薄膜场致发射研究[J].真空科学与技术学报,2012,32(5):368-371. |
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| 作者姓名： | 林金阳 王灵婕 张永爱 郭太良 |
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| 作者单位： | 1. 福州大学光电显示技术研究所 福州 350002;福建工程学院电子电气系 福州 350108
2. 福州大学光电显示技术研究所 福州 350002 |
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| 基金项目： | 国家自然科学基金项目(61106053);教育部博导基金(2010351410007);福建省教育厅科技项目(JA11187;JA11014) |
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| 摘 要： | 利用直流磁控反应溅射法,制备氧化锡薄膜,利用扫描电镜等方法对氧化锡薄膜微观结构进行分析。在低真空下,对不同厚度的氧化锡薄膜进行场致发射测试,结果显示,在氧化锡薄膜厚度为60nm时,场致发射性能最佳,当电流密度为10μA/m2时,开启电压为4.5 V/μm,阴阳两极电场为7 V/μm时,有较佳的场发射密度,同时发光亮度达到2180 cd/m2,结果表明,氧化锡薄膜在场发射平板显示及真空电子器件方面具有较好的应用潜力。
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| 关 键 词： | 氧化锡薄膜 场致发射 磁控反应溅射 |
Growth and Field Emission Characteristics of SnO2 Films |
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| Lin Jinyang
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Wang Lingjie
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Zhang Yongai
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Guo Tailiang.Growth and Field Emission Characteristics of SnO2 Films[J].JOurnal of Vacuum Science and Technology,2012,32(5):368-371. |
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| Authors: | Lin Jinyang Wang Lingjie Zhang Yongai Guo Tailiang |
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| Affiliation: | 1(1.Institute of Photoelectronics and Display Technology,Fuzhou University,Fuzhou 350002,China;2.Department of Electronic Information and Electrical Engineering Fujian University of Technology,Fuzhou 350108,China) |
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| Abstract: | The tin oxide films were deposited by reactive magnetron sputtering on glass substrates.The influence of the growth conditions,including the substrate temperature,deposition rate,ratio of argon and oxygen flow rates,and film thickness,on the microstructures and emission characteristics were evaluated.The prototyped SnO2-array cathode was fabricated and characterized with scanning electron microscopy.The results show that the film thickness strongly affects the field emission property.For instance,the best emitter array can be fabricated with a 60 nm thick SnO2 film.At the on-set voltage of 4.5 V/μm,the emission current density was found to be 10 μA/m2;at a bias voltage of 7 V/μm,the highest emission intensity resulted in a luminosity of 2180 cd/m2. |
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| Keywords: | Tin oxide thin film Field emssion Magnetic reactive sputtering |
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