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Electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields |
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| Authors: | Y Sun G D Sanders F V Kyrychenko C J Stanton G A Khodaparast J Kono Y H Matsuda N Miura H Munekata |
| Affiliation: | a Department of Physics, University of Florida, Gainesville, FL 32611, USA;b Department of Electrical and Computer Engineering, Rice University, Houston, TX 77003, USA;c Department of Physics, Okayama University, Okayama, Japan;d Institute of Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;e Imaging Science and Engineering Lab, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan |
| Abstract: | We present a theoretical and experimental study of electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields. Results are based on an 8-band Pidgeon–Brown model generalized to include finite kz effects and s(p)–d exchange interaction between itinerant carriers and Mn d-electrons. The e-active transitions in the valence band in p-doped samples take place due to the nature of multiple valence bands (heavy and light holes). We have calculated the absorption spectra in high magnetic fields and identified optical transitions which contribute to the cyclotron resonance for both e-active and h-active polarizations. Calculations show agreement with experimental results. |
| Keywords: | III– V diluted magnetic semiconductors Cyclotron resonance |
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