Caractérisation et résultats de fiabilité de transistors à haute mobilité électronique (HEMT)

The telecommunication systems require introduction of high performance devices especially for microwave applications. The emergence of molecular beam epitaxy as a growth technique allows the fabrication of heterostructure-based performing devices. Thus, this communication will focus on the reliability of technologies used for the development of field effect transistor using heterostructures and called HEMT (high electron mobility transistor).