A 45-channel 100 GHz AWG based on Si nanowire waveguides |
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| Authors: | LI Kai-li ZHANG Jia-shun AN Jun-ming LI Jian-guang WANG Liang-liang WANG Yue WU Yuan-d YIN Xiao-jie and HU Xiong-wei |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing100083, China,State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei-jing 100083,China |
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| Abstract: | A 45-channel 100 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about ?23 dB. The device is fabricated on silicon-on-insulator (SOI) substrate by deep ultraviolet lithography (DUV) and inductively coupled plasma (ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of ?8 dB. |
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