| 4°偏轴SiC衬底外延工艺研究 |
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| 引用本文： | 李赟,尹志军,朱志明,赵志飞,陆东赛.4°偏轴SiC衬底外延工艺研究[J].固体电子学研究与进展,2013,33(1):68-71. |
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| 作者姓名： | 李赟 尹志军 朱志明 赵志飞 陆东赛 |
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| 作者单位： | 南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京,210016 |
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| 摘 要： | 4°偏轴SiC衬底上生长的外延薄膜容易出现台阶形貌,外延薄膜表面的台阶形貌对后续制作的器件性能有着一定的影响。主要研究了进气端C/Si比及生长前刻蚀工艺对4°偏轴衬底外延的影响。采用外延生长前的氢气刻蚀工艺,结合掺杂浓度缓变的缓冲层设计,在4°偏轴的SiC衬底上制得了表面无台阶形貌的SiC SBD结构外延材料。利用优化工艺生长的4°偏轴衬底上的SBD结构外延材料目前已经全面应用于600～1 700V SBD器件的研制。
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| 关 键 词： | 同质外延 衬底偏角 台阶形貌 肖特基二极管 |
Epitaxial Growth Process for 4° Off-axis SiC Substrates |
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| LI Yun
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YIN Zhijun
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ZHU Zhiming
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ZHAO Zhifei
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LU Dongsai.Epitaxial Growth Process for 4° Off-axis SiC Substrates[J].Research & Progress of Solid State Electronics,2013,33(1):68-71. |
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| Authors: | LI Yun YIN Zhijun ZHU Zhiming ZHAO Zhifei LU Dongsai |
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| Affiliation: | (Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,210016,CHN) |
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| Abstract: | Epilayers grown on 4° off-axis SiC substrates suffer from step-bunching which is harmful for device performance.The influence of input C/Si ratio and in-situ pre-growth etching process on epilayer morphology was investigated in this paper.A SBD structure epilayer on 4° off-axis SiC substrate without step-bunching was grown by using in-situ pre-growth H2 etching process and a buffer layer design with gradual changing doping concentration.The SiC SBD structure epilayers obtained by optimized process have been applied for 600～1 700 V SBD device fabrication. |
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| Keywords: | homoepitaxial growth substrate off-angle step-bunching Schottky barrier diode(SBD) |
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