| 气相生长氮化铝单晶的新方法 |
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| 引用本文： | 武红磊,郑瑞生,孙秀明,罗飞,杨帆,刘文,敬守勇.气相生长氮化铝单晶的新方法[J].人工晶体学报,2007,36(1):1-4. |
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| 作者姓名： | 武红磊 郑瑞生 孙秀明 罗飞 杨帆 刘文 敬守勇 |
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| 作者单位： | 深圳大学光电子学研究所,深圳,518060 |
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| 基金项目： | 国家自然科学基金;广东省自然科学基金;教育部科学技术基金;广东省深圳市科技计划 |
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| 摘 要： | 通过在钨坩埚盖开小孔的方法改变氮化铝结晶衬底上的温度场分布,在开孔处形成局部低温区;由于孔的几何尺寸的限制和氮化铝晶体生长的各向异性,开孔处的氮化铝晶体单晶化;随后,开孔处的单晶起籽晶的作用,逐渐长成较大尺寸、较高质量的氮化铝单晶.目前用该方法已经制备出直径大于2mm的氮化铝单晶体.
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| 关 键 词： | 氮化铝 物理气相传输 单晶 |
| 文章编号： | 1000-985X（2007）01-0001-04 |
| 修稿时间： | 2006-08-01 |
A Novel Method for Growing AlN Single Crystal by Physical Vapor Transport |
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| WU Hong-lei,ZHENG Rui-sheng,SUN Xiu-ming,LUO Fei,YANG Fan,LIU Wen,JING Shou-yong.A Novel Method for Growing AlN Single Crystal by Physical Vapor Transport[J].Journal of Synthetic Crystals,2007,36(1):1-4. |
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| Authors: | WU Hong-lei ZHENG Rui-sheng SUN Xiu-ming LUO Fei YANG Fan LIU Wen JING Shou-yong |
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| Affiliation: | Institute of Optoelectronics, Shenzhen University,Shenzhen 518060, China |
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| Abstract: | Temperature distribution in the lid is changed by drilling a little hole in the tungsten crucible lid.By this way,a low temperature local section on the lid is offered.A self-seeded AlN single crystal is grown due to the anisotropic growth property of AlN crystals and limitation of the hole.In the following growth process,the crystal as a seed becomes a large size and high quality single crystal.By this method,AlN single crystals with diameters of larger than 2mm were obtained successfully. |
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| Keywords: | AlN physical vapor transport single crystal |
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