Optimization of ohmic contact and adhesion on polysilicon in MEMS-NEMS wet etching process |
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Authors: | E Herth E AlgréB Legrand L Buchaillot |
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Affiliation: | a Institut d’Electronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, IEMN, Avenue Poincaré, B.P. 69, 59652 Villeneuve d’Ascq Cedex, France b Université Paris-Est, ESYCOM, ESIEE Paris, 2, boulevard Blaise Pascal, Cité DESCARTES, B.P. 99, 93162 Noisy le Grand Cedex, France |
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Abstract: | This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon doping parameters, such as ion energy, dose, and annealing were investigated. In particular a superficial implantation realized after a deep implantation enables one to slightly decrease the polysilicon resistivity while the contact resistance is reduced. And ohmic contacts with wet etching resistance were realized by depositing the different metallization stacks. We demonstrate that ohmic contact pad Cr/Pt/Au has provided a good adhesion on LPCVD-polysilicon after wet etching. |
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Keywords: | Polysilicon implantation Ohmic contact Micromachining process Metallization etching resistance |
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