Self-Propagating High-Temperature Synthesis of Ti3SiC2: Study of the Reaction Mechanisms by Time-Resolved X-Ray Diffraction and Infrared Thermography |
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Authors: | Véronique Gauthier Benoît Cochepin Sylvain Dubois Dominique Vrel |
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Affiliation: | Laboratoire de Métallurgie Physique (UMR 6630 CNRS), BP 30179, 86962 Futuroscope-Chasseneuil du Poitou, France; Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions (UPR 1311 CNRS), Institut Galilée, 93430 Villetaneuse, France |
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Abstract: | Ti3SiC2 is synthesized by self-propagating high-temperature synthesis (SHS) of elemental titanium, silicon, and graphite powders. The reaction paths and structure evolution are studied in situ during the SHS of the 3Ti+Si+2C mixture by time-resolved X-ray diffraction coupled with infrared thermography. The proposed reaction mechanism suggests that Ti3SiC2 might be formed from Ti–Si liquid phase and solid TiC x . Finally, the effect of the powders starting composition on the Ti3SiC2 synthesis is studied. For the investigated initial mixtures, TiC x is always formed as a major impurity together with the Ti3SiC2 phase. |
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