| Memory devices based on organic electric bistable materials |
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| 作者姓名： | CHEN Qi BAI Hua SHI GaoQuant |
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| 作者单位： | Department of Chemistry, Tsinghua University, Beijing 100084, China |
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| 基金项目： | Supported by the National Natural Science Foundation of China （Grant No. 50533030）, and the 973 Project （Grant No. 2003CB615700） |
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| 摘 要： | Organic/metallic composites have demonstrated electrical bistability,as well as memory effects. These advanced materials have shown potential applications in digital information storage because of their good stability,flexibility and fast response speed. The electric bistability phenomenon can be explained by electric field-induced electron transfer/storage. This article reviews the recent progress of memory devices based on organic/metallic and polymeric composites with electric bistability.
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| 关 键 词： | 共轭高分子材料 数据存储 稳定性 记忆装置 |
| 收稿时间： | 9 April 2007 |
| 修稿时间： | 2007-04-09 |
Memory devices based on organic electric bistable materials |
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| CHEN Qi BAI Hua SHI GaoQuant.Memory devices based on organic electric bistable materials[J].Chinese Science Bulletin,2007,52(15):2017-2023. |
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| Authors: | Chen Qi Bai Hua Shi GaoQuan |
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| Affiliation: | (1) Department of Chemistry, Tsinghua University, Beijing, 100084, China |
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| Abstract: | Organic/metallic composites have demonstrated electrical bistability,as well as memory effects. These advanced materials have shown potential applications in digital information storage because of their good stability,flexibility and fast response speed. The electric bistability phenomenon can be explained by electric field-induced electron transfer/storage. This article reviews the recent progress of memory devices based on organic/metallic and polymeric composites with electric bistability. |
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| Keywords: | conjugated polymers data storage bistability nanoparticles composite |
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