| GaN薄膜发光特性的研究 |
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| 引用本文： | 李静,冯倩,何秀坤,汝琼娜,周智慧.GaN薄膜发光特性的研究[J].微纳电子技术,2005,42(5):224-226. |
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| 作者姓名： | 李静 冯倩 何秀坤 汝琼娜 周智慧 |
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| 作者单位： | 1. 中国电子科技集团公司第46所,天津,300192
2. 西安电子科技大学微电子研究所,西安,710071 |
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| 摘 要： | 通过扫描电子显微镜和室温光荧光谱仪研究了生长气氛、缓冲层厚度、掺杂浓度不同对GaN薄膜发光特性的影响。实验证明,缓冲层可以较好地改善外延膜的结构和表面形貌。n型GaN薄膜的光荧光谱图显示,主峰的积分强度随着掺硅浓度的增高而增高,黄带峰的发光强度反而下降。
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| 关 键 词： | 扫描电子显微镜 光荧光谱仪 生长气氛 缓冲层 掺杂 |
| 文章编号： | 1671-4776(2005)05-0224-03 |
| 修稿时间： | 2004年10月14 |
Study of Luminescence Character on GaN Films |
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| LI Jing,FENG Qian,HE Xiu-kun,RU Qiong-na,ZHOU Zhi-hui.Study of Luminescence Character on GaN Films[J].Micronanoelectronic Technology,2005,42(5):224-226. |
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| Authors: | LI Jing FENG Qian HE Xiu-kun RU Qiong-na ZHOU Zhi-hui |
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| Affiliation: | LI Jing1,FENG Qian2,HE Xiu-kun1,RU Qiong-na1,ZHOU Zhi-hui1 |
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| Abstract: | The influence of growing atmosphere,thicknesses of buffer layer,different doping densities on the luminescence character of GaN films were studied by using SEM and Photoluminescence spectra. Experiment showed that buffer layer could improve the structure of epitaxial layer and surface micrograph efficiently. The Photoluminescence spectrum of GaN:Si showed that the integration intensity of the main peak increased and luminous intensity of the yellow band droped with Si exiting. |
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| Keywords: | SEM photoluminescence spectra growing atmosphere buffer layer doping |
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