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Chloride and Indium‐Chloride‐Complex Inorganic Ligands for Efficient Stabilization of Nanocrystals in Solution and Doping of Nanocrystal Solids
Authors:Vladimir Sayevich  Chris Guhrenz  Maria Sin  Volodymyr M Dzhagan  Alexander Weiz  Daniel Kasemann  Eike Brunner  Michael Ruck  Dietrich R T Zahn  Karl Leo  Nikolai Gaponik  Alexander Eychmüller
Affiliation:1. Physical Chemistry and Center for Advancing Electronics Dresden (cfAED), TU Dresden, Dresden, Germany;2. Department of Chemistry and Food Chemistry, Bioanalytical Chemistry, TU Dresden, Dresden, Germany;3. Semiconductor Physics, TU Chemnitz, Chemnitz, Germany;4. Department of Chemistry and Food Chemistry, TU Dresden, Dresden, Germany;5. Institut für Angewandte Photophysik, TU Dresden, Dresden, Germany;6. Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
Abstract:Here, the surface functionalization of CdSe and CdSe/CdS core/shell nanocrystals (NCs) with compact chloride and indium‐chloride‐complex ligands is reported. The ligands provide not only short interparticle distances but additionally control doping and passivation of surface trap states, leading to enhanced electronic coupling in NC‐based arrays. The solids based on these NCs show an excellent electronic transport behavior after heat treatment at the relatively low temperature of 190 °C. Indeed, the indium‐chlorido‐capped 4.5 nm CdSe NC based thin‐film field‐effect transistor reaches a saturation mobility of μ = 4.1 cm2 (V s)?1 accompanied by a low hysteresis, while retaining the typical features of strongly quantum confined semiconductor NCs. The capping with chloride ions preserves the high photoluminescence quantum yield ( ≈ 66%) of CdSe/CdS core/shell NCs even when the CdS shell is relatively thin (six monolayers). The simplicity of the chemical incorporation of chlorine and indium species via solution ligand exchange, the efficient electronic passivation of the NC surface, as well as their high stability as dispersions make these materials especially attractive for wide‐area solution‐processable fabrication of NC‐based devices.
Keywords:Nanocrystals  inorganic ligands  ligand exchange  doping  electronic transport  field‐effect transistors
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