Chloride and Indium‐Chloride‐Complex Inorganic Ligands for Efficient Stabilization of Nanocrystals in Solution and Doping of Nanocrystal Solids |
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Authors: | Vladimir Sayevich Chris Guhrenz Maria Sin Volodymyr M Dzhagan Alexander Weiz Daniel Kasemann Eike Brunner Michael Ruck Dietrich R T Zahn Karl Leo Nikolai Gaponik Alexander Eychmüller |
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Affiliation: | 1. Physical Chemistry and Center for Advancing Electronics Dresden (cfAED), TU Dresden, Dresden, Germany;2. Department of Chemistry and Food Chemistry, Bioanalytical Chemistry, TU Dresden, Dresden, Germany;3. Semiconductor Physics, TU Chemnitz, Chemnitz, Germany;4. Department of Chemistry and Food Chemistry, TU Dresden, Dresden, Germany;5. Institut für Angewandte Photophysik, TU Dresden, Dresden, Germany;6. Max Planck Institute for Chemical Physics of Solids, Dresden, Germany |
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Abstract: | Here, the surface functionalization of CdSe and CdSe/CdS core/shell nanocrystals (NCs) with compact chloride and indium‐chloride‐complex ligands is reported. The ligands provide not only short interparticle distances but additionally control doping and passivation of surface trap states, leading to enhanced electronic coupling in NC‐based arrays. The solids based on these NCs show an excellent electronic transport behavior after heat treatment at the relatively low temperature of 190 °C. Indeed, the indium‐chlorido‐capped 4.5 nm CdSe NC based thin‐film field‐effect transistor reaches a saturation mobility of μ = 4.1 cm2 (V s)?1 accompanied by a low hysteresis, while retaining the typical features of strongly quantum confined semiconductor NCs. The capping with chloride ions preserves the high photoluminescence quantum yield ( ≈ 66%) of CdSe/CdS core/shell NCs even when the CdS shell is relatively thin (six monolayers). The simplicity of the chemical incorporation of chlorine and indium species via solution ligand exchange, the efficient electronic passivation of the NC surface, as well as their high stability as dispersions make these materials especially attractive for wide‐area solution‐processable fabrication of NC‐based devices. |
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Keywords: | Nanocrystals inorganic ligands ligand exchange doping electronic transport field‐effect transistors |
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