Plasmon‐Induced Sub‐Bandgap Photodetection with Organic Schottky Diodes

Organic materials for near‐infrared (NIR) photodetection are in the focus for developing organic optical‐sensing devices. The choice of materials for bulk‐type organic photodetectors is limited due to effects like high nonradiative recombination rates for low‐gap materials. Here, an organic Schottky barrier photodetector with an integrated plasmonic nanohole electrode is proposed, enabling structure‐dependent, sub‐bandgap photodetection in the NIR. Photons are detected via internal photoemission (IPE) process over a metal/organic semiconductor Schottky barrier. The efficiency of IPE is improved by exciting localized surface plasmon resonances, which are further enhanced by coupling to an out‐of‐plane Fabry–Pérot cavity within the metal/organic/metal device configuration. The device allows large on/off ratio (>1000) and the selective control of individual pixels by modulating the Schottky barrier height. The concept opens up new design and application possibilities for organic NIR photodetectors.