| ECR-PEMOCVD生长GaN RHEED图像研究 |
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| 引用本文： | 郎佳红,顾彪,徐茵,秦福文,曲钢.ECR-PEMOCVD生长GaN RHEED图像研究[J].应用激光,2004,24(1):31-35. |
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| 作者姓名： | 郎佳红 顾彪 徐茵 秦福文 曲钢 |
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| 作者单位： | 大连理工大学三束材料改性国家重点实验室;大连理工大学电气工程与应用电子技术系,大连,116024 |
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| 基金项目： | 国家自然科学基金 (6 9976 0 0 8)，86 3计划 (86 3- 715 - 0 11- 0 0 33)资助项目 |
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| 摘 要： | 通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积 (ECR -PEMOCVD)系统上装配反射高能电子衍射仪 (RHEED) ,对外延GaN生长过程进行原位监测。通过分析研究RHEED图像确定衬底清洗、氮化、缓冲层生长、外延层生长的合适条件
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| 关 键 词： | RHEED ECR-PEMOCVD GaN Al2O3 |
The Study of GaN growth process using RHEED by ECR-PEMOCVD |
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| Lang Jiahong,Gu Biao,Xu Yin,Qin Fuwen,Qu Gang.The Study of GaN growth process using RHEED by ECR-PEMOCVD[J].Applied Laser,2004,24(1):31-35. |
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| Authors: | Lang Jiahong Gu Biao Xu Yin Qin Fuwen Qu Gang |
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| Abstract: | The reflection high-energy electron diffraction (RHEED) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system designed by us was used to monitor the GaN growth process in-situ. By study of the RHEED images to optimize the condition parameters of substrate cleaning?substrate nitridation?buffer layer growth ?epitaxy layer growth. |
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| Keywords: | RHEED GaN ECR-PEMOCVD Al 2O 3 |
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