H2和H2O对双极器件抗辐射性能的影响规律和机制

为了深入研究H₂和H₂O进入氧化层后对双极器件辐射效应的影响机制，以栅控双极晶体管为研究载体，分别开展了不同浓度H₂浸泡中的辐照试验和温湿度试验后的总剂量辐照试验。试验结果表明，随着氢气浸泡浓度的增加，器件的抗辐射能力逐渐降低；而温湿度试验后，由于水汽的进入，器件在随后的辐照试验过程中辐射损伤呈增大趋势。在此基础上，利用栅控栅扫描法进行氧化层辐射感生缺陷的定量分离，发现H₂和H₂O进入器件氧化层后，均会造成辐射感生界面陷阱电荷Nit的增加，并在一定程度上降低辐射感生氧化物陷阱电荷Not的量，结合理论分析进一步给出了H₂和H₂O造成器件损伤增强的潜在机制。研究成果对于辐射环境用电子系统的抗辐射性能评价和应用具有参考意义。

Effect of H2 and H2O on the total dose effect of bipolar devices

In order to study the effect of H₂ and H₂O on the radiation effect of domestic bipolar devices, a typical gate-controlled bipolar transistor is designed, and the irradiation tests in different concentrations of H₂ are carried out, as well as the total dose irradiation tests after the temperature and humidity tests. The results show that the anti-radiation ability of the device decreases gradually with the increase of hydrogen concentration. After the temperature and humidity test, the radiation damage of the device increases with the entry of H₂O. On this basis, gate scanning method is employed to quantitatively separate the radiation-induced defects of the oxide layer. It is found that both H₂ and H₂O will cause the increase of the radiation-induced interface trap charge Nit after entering into the oxide layer. In addition, the potential mechanism of H₂ and H₂O induced damage enhancement is given by theoretical analysis. The research results are of great value to the evaluation of the anti-radiation performance of electronic systems in radiation environment.