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可调谐TEACO_2激光辐照SiH_4击穿过程的研究
引用本文:张连水,张贵银,傅广生,韩理,张开锡.可调谐TEACO_2激光辐照SiH_4击穿过程的研究[J].中国激光,1992,19(8):624-626.
作者姓名:张连水  张贵银  傅广生  韩理  张开锡
作者单位:河北大学物理系,河北大学物理系,河北大学物理系,河北大学物理系,河北大学物理系 071002,071002 华北电力学院,071002,071002,071002
基金项目:国家自然科学基金资助项目
摘    要:一、引言 激光等离子体淀积硅膜在半导体工业得到广泛应用。在这种技术中,SIH。通常被用做各种硅膜生长的高纯硅源。现已有很多关于SIH_4激光等离子体淀积过程的报道~1~3],其中普遍

收稿时间:1990/7/9

Study on the process of SiH_4 breakdown irradiated by frequency tunable TEA CO_2 laser
Zhang Lianshuj,Zhang Guiyin,Fit Guangsheng,Hun Li,Zhang Kaixi.Study on the process of SiH_4 breakdown irradiated by frequency tunable TEA CO_2 laser[J].Chinese Journal of Lasers,1992,19(8):624-626.
Authors:Zhang Lianshuj  Zhang Guiyin  Fit Guangsheng  Hun Li  Zhang Kaixi
Abstract:The process of SiH4/Ar breakdown irradiated by frequency tunable TEA CO2 laser has been studied. The breakdown threshold of SiH4/Ar has been measured as a funotiou. of laser energy, laser frequency and gas pressure. Based on the experimental results, the physical process of 8iH4/Ar breakdown is proposed to be a process of optic-breakdown through resonant absorption of laser beams
Keywords:threshold  CO_2 laser  SiH_4  breakdown
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