A new gate drive circuit for high-speed operation of GTO thyristors |
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Authors: | Bum-Seok Suh Dong-Seok Hyun |
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Affiliation: | Dept. of Electr. Eng., Hanyang Univ., Seoul; |
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Abstract: | This paper presents a new gate turn-off drive circuit for GTO thyristors, which can accomplish faster turn-off switching for high-speed operation of the GTO. The switching characteristics of GTO's can be improved by use of the gate drive circuit that is able to make a very high rate of the negative gate current. The major disadvantage of the conventional gate turn-off driving technique is that it has a difficulty in realizing higher negative diG/dt due to the maximum reverse gate-cathode voltage and the stray inductances within the gate turn-off drive circuit. This paper shows that this problem can be overcome by adding another gate turn-off drive circuit to the conventional gate turn-off drive circuit. Simulation and experimental results in conjunction with chopper circuit verify the performance of the proposed gate drive circuit |
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