Free carrier optical absorption at 10.6 μm in GaAs |
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Authors: | D Bois P Leyral C Schiller |
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Affiliation: | (1) Laboratoire de Physique de la Matière (équipe de recherche associée au C.N.R.S.), I.N.S.A., 69621, Villeurbanne;(2) Laboratoire d'electronique et de physique appliquee, 94450, Limeil-Brevannes |
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Abstract: | Optical absorption measurements at 10.6 μm have been perfor-med in chromium doped GaAs samples using a calorimetric tech-nique
at 300 K, and an optical system to determine the varia-tion of the absorption versus temperature between 300 K and 650 K.
Hall effect measurements have also been carried out in the same temperature range. The optical absorption cross sec-tion for
both electrons and holes are discussed and experi-mentally determined. A semi-empirical formula is deduced which permit the
calculation of the 10.6 μm free carrier absorption at any temperature and doping level provided the electron mobility is known.
Besides free carrier and multi-phonon absorption another mechanism must be considered to explain the experimental data. Possible
effect of small pre-cipitates is discussed. |
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Keywords: | Gallium Arsenide optical absorption CO2 laser windows |
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