| 超薄高介电Er2O3栅介质薄膜的漏电机理 |
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| 引用本文： | 武德起,姚金城,赵红生,常爱民,李锋.超薄高介电Er2O3栅介质薄膜的漏电机理[J].半导体学报,2009,30(10):103003-6. |
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| 作者姓名： | 武德起 姚金城 赵红生 常爱民 李锋 |
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| 作者单位： | Xinjiang Technical Institute of Physics&Chemistry;Chinese Academy of Sciences;Institute of Semiconductors;Graduate University of the Chinese Academy of Sciences; |
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| 基金项目： | supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(No.072C201301); the Graduate Student Innovation Program of the Chinese Academy of Sciences |
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| 摘 要： | 采用激光分子束外延设备在不同温度下制备了不同厚度的超薄晶态、非晶态高介电Er2O3栅介质薄膜，用X射线衍射和高分辨透射电镜分析了薄膜结构，用HP4142B半导体参数分析仪测试了Al/Er2O3/Si/Al结构MOS电容器的漏电流。XRD谱和HRTEM图像显示400℃以下制备的Er2O3薄膜呈非晶态，400℃到840℃制备的Er2O3薄膜是(111)方向高度择优取向的。电学测试表明：晶态Er2O3薄膜厚度由5.7 nm 减小到3.8 nm，漏电流密度从6.20×10-5 A/cm2突增到6.56×10-4 A/cm2，增加了一个数量级。而厚度3.8 nm的非晶Er2O3薄膜漏电流密度仅为1.73×10-5 A/cm2。漏电流数据分析显示高场下超薄Er2O3薄膜的漏电流主要来自于Fowler-Nordheim隧穿。低场下超薄晶态Er2O3薄膜较大的漏电流是由晶粒边界产生的杂质缺陷引起。
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| 关 键 词： | Er2O3，高介电栅介质，漏电流，漏电流机理 |
| 收稿时间： | 5/18/2009 6:35:01 PM |
Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film |
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| Wu Deqi,Yao Jincheng,Zhao Hongsheng,Chang Aimin and Li Feng.Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film[J].Chinese Journal of Semiconductors,2009,30(10):103003-6. |
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| Authors: | Wu Deqi Yao Jincheng Zhao Hongsheng Chang Aimin and Li Feng |
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| Affiliation: | Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Graduate University of the Chinese Academy of Sciences, Beijing 10004;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Graduate University of the Chinese Academy of Sciences, Beijing 10004;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Graduate University of the Chinese Academy of Sciences, Beijing 10004 |
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| Abstract: | |
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| Keywords: | Er2O3 high-k gate dielectrics leakage current leakage current mechanisms |
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