| 1.3μm行波式半导体激光放大器 |
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| 引用本文： | 罗斌,陈建国,卢玉村.1.3μm行波式半导体激光放大器[J].激光技术,1992,16(4):206-209. |
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| 作者姓名： | 罗斌 陈建国 卢玉村 |
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| 作者单位： | 1.四川大学光电科学技术系, 成都 |
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| 基金项目： | 国家教委博士点基金，自然科学基金 |
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| 摘 要： | 利用多级尝试法对主动监控法进行优化,获得了两端面剩余模式反射率几何平均值小于3×10-4的行波式半导体激光放大器,并在1.3μm波段获得了20dB的信号增益。
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| 收稿时间： | 1992-01-24 |
1.3μm travelling-wave semiconductor laser amplifier |
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| Abstract: | With the aid of multi-step trials,the active monitoring method adopted to control the deposition of the AR coatings on the facets of the semiconductor lasers has been optimized.As a result,a travelling-wave semiconductor amplifier with an average facet reflectivity of less than 3×10-4 has been obtained,and 20dB signal gain at 1.3μm has been observed. |
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