| 超薄栅n-MOSFETs热载流子寿命预测模型 |
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| 引用本文： | 穆甫臣,许铭真,谭长华,段小蓉.超薄栅n-MOSFETs热载流子寿命预测模型[J].半导体学报,2001,22(10):1306-1309. |
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| 作者姓名： | 穆甫臣 许铭真 谭长华 段小蓉 |
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| 作者单位： | 北京大学微电子所，北京100871 |
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| 摘 要： | 对氧化层厚度为 4和 5 nm的 n- MOSFETs进行了沟道热载流子应力加速寿命实验 ,研究了饱和漏电流在热载流子应力下的退化 .在饱和漏电流退化特性的基础上提出了电子流量模型 ,此模型适用于氧化层厚度为 4— 5 nm或更薄的器件
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| 关 键 词： | HCI 热载流子效应 n-MOSFET 寿命预测 |
| 文章编号： | 0253-4177(2001)10-1306-04 |
| 修稿时间： | 2000年12月22日 |
A New Lifetime Prediction Model for n-MOSFETs with Ultrathin Gate Oxides Under Hot-Carrier Stress |
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| MU Fu chen,XU Ming zhen,TAN Chang hua and DUAN Xiao rong.A New Lifetime Prediction Model for n-MOSFETs with Ultrathin Gate Oxides Under Hot-Carrier Stress[J].Chinese Journal of Semiconductors,2001,22(10):1306-1309. |
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| Authors: | MU Fu chen XU Ming zhen TAN Chang hua and DUAN Xiao rong |
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| Abstract: | Hot carrier degradation of n MOSFETs under V g=V d stress mode is examined.A new lifetime prediction model electron fluence model is developed based on the universal power law between the degradation of saturated drain current (dI dsat ) and the product of the injected charge fluence times the gate current,which is independent of gate or drain voltages.This model applies to n MOSFETs with ultrathin gate oxides.The lifetime can be estimated under the operation conditions. |
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| Keywords: | HCI hot carrier effect n MOSFET lifetime prediction |
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