| 反应溅射法制备耐熔金属氮化物/GaAs肖特基结 |
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| 引用本文： | 范永平.反应溅射法制备耐熔金属氮化物/GaAs肖特基结[J].微电子学,1988(3). |
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| 作者姓名： | 范永平 |
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| 作者单位： | 西安交通大学电子工程系 |
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| 摘 要： | 自对准GaAs场效应晶体管工艺要求非常稳定的材料作为栅电极,经高温退火过程后它仍必须与衬底保持良好的肖特基接触。本文总结了近几年来有关耐熔金属氮化物/GaAs肖特基结的研究工作,对取得的进展及存在的问题进行了讨论。
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| 关 键 词： | 耐熔金属氮化物 肖特基结 溅射 高温退火 |
The Preparation of Refractory Metal Nitride/GaAs Schottky Junction With Sputtering |
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| Fan Yongping.The Preparation of Refractory Metal Nitride/GaAs Schottky Junction With Sputtering[J].Microelectronics,1988(3). |
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| Authors: | Fan Yongping |
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| Abstract: | In self-aligning GaAs FET process, a very stable material is required for gate electrode, which must be in gccd Schottky contact with substrate after high tempetature annealing. This paper summarises the research work on refractory metal nitride/GaAs Schottky junction in recent years and discusses the progress that has been made and the rremaining problems. |
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| Keywords: | refractory metal nitride Schottky contact sputtering high temper-ature annealing |
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