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高强度聚焦超声功率源的优化设计
引用本文:邓思建,谭坚文,叶方伟,杨黎,曾德平.高强度聚焦超声功率源的优化设计[J].电源学报,2013,11(6):46-52.
作者姓名:邓思建  谭坚文  叶方伟  杨黎  曾德平
作者单位:重庆医科大学生物医学工程学院,省部共建超声医学工程国家重点实验室,超声医学工程重庆市市级重点实验室,中国人民解放军重庆通信学院特种电源重点实验室,重庆医科大学生物医学工程学院,省部共建超声医学工程国家重点实验室,超声医学工程重庆市市级重点实验室,超声医疗国家工程研究中心,重庆医科大学生物医学工程学院,省部共建超声医学工程国家重点实验室,超声医学工程重庆市市级重点实验室
基金项目:国家基金委重大仪器专项“球形聚焦集声系统的研究”(81127901)
摘    要:高强度聚焦超声(HIFU)功率源直接影响HIFU治疗的有效性和安全性。受功率MOSFET极间电容和导通电阻等寄生参数的影响,基于E类功率放大电路的HIFU功率源实际工作特性常偏离理想条件下的理论设计值。本文在理论设计的基础上,结合功率MOSFET等效电路模型,采用Saber软件对HIFU功率源的E类放大电路进行仿真,得到了放大器最佳工作状态时的谐振回路参数。实验测试表明,优化后的功率源工作效率和特性有显著的提高。

关 键 词:高强度聚焦超声  E类功率放大电路  Saber仿真  优化设计
收稿时间:2013/6/28 0:00:00
修稿时间:9/4/2013 12:00:00 AM

Optimization design of high intensity focused ultrasound power source
DENG Si-jian,TAN Jian-wen,YE Fang-wi,YANG Li and ZENG De-ping.Optimization design of high intensity focused ultrasound power source[J].Journal of power supply,2013,11(6):46-52.
Authors:DENG Si-jian  TAN Jian-wen  YE Fang-wi  YANG Li and ZENG De-ping
Affiliation:State Key Laboratory of Ultrasound Engineering in Medicine Co-Founded by Chongqing and the Ministry of Science and Technology, Chongqing Key Laboratory of Ultrasound in Medicine and Engineering, College of Biomedical Engineering, Chongqing Medical University,,Key Lab of Special Power Supply, Chongqing Communication Institute,State Key Laboratory of Ultrasound Engineering in Medicine Co-Founded by Chongqing and the Ministry of Science and Technology, Chongqing Key Laboratory of Ultrasound in Medicine and Engineering, College of Biomedical Engineering, Chongqing Medical University,,National Engineering Research Center of Ultrasound Medicine,State Key Laboratory of Ultrasound Engineering in Medicine Co-Founded by Chongqing and the Ministry of Science and Technology, Chongqing Key Laboratory of Ultrasound in Medicine and Engineering, College of Biomedical Engineering, Chongqing Medical University,
Abstract:High intensity focused ultrasound(HIFU) power source directly affects the effectiveness and safety of the HIFU therapy. Affected by the electrode capacitance and on-resistance of power MOSFET, the actual working characteristics of the HIFU power source based on classe E power amplifier often deviates from the theoretical design values under ideal conditions. Based on the theoretical design, the HIFU power souce using class E amplifier circuit is simulated adopted Saber by combining the equivalent circuit model of power MOSFET in this paper. The resonant circuit parameters of best working condition is determined by simulation. Experimental tests showed that the working efficiency and characteristics of the power source is optimized significantly.
Keywords:high intensity focused ultrasound  class E power amplifier  Saber simulation  optimization design
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