| a—Si：H TFT有源矩阵制造技术的研究 |
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| 引用本文： | 张少强,徐重阳.a—Si：H TFT有源矩阵制造技术的研究[J].光电子技术,1997,17(1):9-14. |
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| 作者姓名： | 张少强 徐重阳 |
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| 作者单位： | 华中理工大学固体电子学系!武汉430074 |
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| 摘 要： | 对ａ：Ｓｉ：Ｈ ＴＦＴ有源矩阵的一些关键制造工艺进行研究。研究了Ｔａ２Ｏ５／ａ－ＳｉＮｘ双绝缘层的制备技术，提出了一种新的双有源层结构ａ－Ｓｉ：Ｈ ＴＦＴ来降低背光源对器件特性的影响，研制的ａ－Ｓｉ：Ｈ ＴＦＴ有源矩阵实现了彩色视频信号的动态显示。
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| 关 键 词： | 有源矩阵 液晶显示器 光敏性 |
The Study of Fabrication Technology of a-Si: H TFT Active Matrix |
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| Zhang Shaoqiang,Xu Zhongyang, Wang Chang''''an, Zhou Xuemei,Zou Xuecheng, Zhao Bofang.The Study of Fabrication Technology of a-Si: H TFT Active Matrix[J].Optoelectronic Technology,1997,17(1):9-14. |
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| Authors: | Zhang Shaoqiang Xu Zhongyang Wang Chang'an Zhou Xuemei Zou Xuecheng Zhao Bofang |
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| Abstract: | Some key issues about the fabrication processes of a-Si: H TFT active matrix are studied. The process of the Ta,O,/a-SiN. double-layer insulator is researched. A novel a-Si: H TFT with double active layer structure, which can decrease the effect of back illumination on the TFT characteristics, is proposed. The color video image is displayed in the AM-LCD packaged with the a-Si: H TFT active matrix manufactured by us. |
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| Keywords: | a-Si: H TFT active matrix liquid crystal display photosensitivity |
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