| 绝缘栅PMOS的SUPREM—SEDAN联机模拟研究 |
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| 引用本文： | 李惠军,龙莹山.绝缘栅PMOS的SUPREM—SEDAN联机模拟研究[J].山东科学,1994,7(2):19-22. |
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| 作者姓名： | 李惠军 龙莹山 |
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| 作者单位： | 山东工业大学，山东省科学院 |
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| 摘 要： | 本文分析及研究了作者对绝缘栅ＰＭＯＳ场效应结构所进行的ＳＵＰＲＥＭ—ＳＥＤＡＮ联机模拟．重点在衬底电阻率（掺杂浓度）与ＭＯＳ结构阈值电压之间的定量关系上得到了与实验完全一致的结果．同时，定量地描述了栅氧层中电离电荷的分布及其行为．揭示了上述效应的机理．
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| 关 键 词： | 场效应，阈值电压，工艺模拟，半导体器件模拟 |
A SIMULATE STUDY FOR THE COVERING-GRID P-MOS SUPREM-SEDAN |
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| Li Huijun.A SIMULATE STUDY FOR THE COVERING-GRID P-MOS SUPREM-SEDAN[J].Shandong Science,1994,7(2):19-22. |
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| Authors: | Li Huijun |
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| Abstract: | This paper analyses and researches into the SUPREM-SEDAV simulation to the covering-grid P-MOS field effect structure, from the quantitative relation ship between substrates resistivity and MOS structure threshold value, we have won the same result with test. At the same time,the distribution of ionization charges in grid oxide was described in quantitative The above-mentioned mechanism of effect was revealled. |
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| Keywords: | field effect threshold value technique simulate semiconductor devicesimulate |
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