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Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing |
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| Authors: | SV Jagadeesh Chandra Chel-Jong Choi S Uthanna G Mohan Rao |
| Affiliation: | a School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea;b Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756, Republic of Korea;c Department of Physics, Sri Venkateswara University, Tirupati 517 502, India;d Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India |
| Abstract: | The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic β-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was <20 nA cm?2 at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole–Frenkel. |
| Keywords: | Tantalum oxide Sputtering Metal– insulator– semiconductor structure Electrical properties |
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