| 偏转角(211)Si基CdTe复合衬底研究 |
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| 引用本文： | 王丛,高达,王经纬,强宇,周立庆.偏转角(211)Si基CdTe复合衬底研究[J].激光与红外,2018,48(7):876-879. |
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| 作者姓名： | 王丛 高达 王经纬 强宇 周立庆 |
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| 作者单位： | 华北光电技术研究所,北京 100015 |
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| 基金项目： | 国防基础科研计划项目(No.JCKY2016210B002)资助 |
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| 摘 要： | 晶面偏角是提高(211) Si基CdTe复合衬底质量的方法之一。通过对偏转角Si基CdTe复合衬底分子束外延工艺的研究,发现2°和3°偏转角(211)Si基CdTe复合衬底在晶体质量方面优于标准(211)Si基CdTe复合衬底,是未来提高Si基CdTe复合衬底质量的新方向。
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| 关 键 词： | 硅 碲化镉 偏转角Si衬底 分子束外延 |
Study on composite substrate of CdTe and Si(211)with tilt angle |
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| WANG Cong,GAO D,WANG Jing-wei,QIANG Yu,ZHOU Li-qing.Study on composite substrate of CdTe and Si(211)with tilt angle[J].Laser & Infrared,2018,48(7):876-879. |
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| Authors: | WANG Cong GAO D WANG Jing-wei QIANG Yu ZHOU Li-qing |
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| Affiliation: | North China Research Institute of Electro-Optics,Beijing 100015,China |
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| Abstract: | The tilt angle of crystal plane is one method for improving the crystal quality of composite substrate of CdTe and Si(211).The influence of tilt angle on CdTe/Si composite substrate is studied,and it is found that crystal quality of composite substrate of CdTe and Si(211) with 2° and 3° tilt angle is superior to that of standard composite substrate of CdTe and Si(211). |
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| Keywords: | Si CdTe/Si Si substrate with tilt angle MBE |
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