| 掺钯二氧化锡气敏薄膜的实验研究 |
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| 引用本文： | 曾宇平,孟魏.掺钯二氧化锡气敏薄膜的实验研究[J].传感器与微系统,1993(6):10-12,18. |
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| 作者姓名： | 曾宇平 孟魏 |
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| 作者单位： | 中国科技大学
(曾宇平，孟魏，沈荷生)，中国科技大学(沈瑜生) |
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| 摘 要： | XPS分析表明,用直流溅射法制备的掺钯薄膜气敏元件,钯的溅射率比锡高,在薄膜中钯的含量高于靶中的含量、和纯SnO_2薄膜相比,此元件对还原性气体有很高的灵敏度,尤其对H_2和CH_4.对于该元件的气敏机理也作了初步探讨.
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| 关 键 词： | 溅射 掺杂 气敏薄膜 |
Study on Properties of Pd -doped Tin Oxide Gas - Sensitive Thin Film |
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| Zeng Yuping Meng We Shen Hesheng Shen Yusheng.Study on Properties of Pd -doped Tin Oxide Gas - Sensitive Thin Film[J].Transducer and Microsystem Technology,1993(6):10-12,18. |
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| Authors: | Zeng Yuping Meng We Shen Hesheng Shen Yusheng |
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| Affiliation: | University of Science and Technology of China |
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| Abstract: | The Pd-doped SnO2 thin film was prepared by DC sputtering. From the analysis of X-ray photoemission (XPS), the sputtering ratio of palladium is greater than that of tin, and the amount of palladium in the thin film is larger than that in the target. As compared with the pure SnO2 thin film, the gas sensor has a good sensitivity to reducing gases, especially to H2 and CH4. Gas sensing mechanism of the thin film is also investigated. |
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| Keywords: | Sputtering Doping Gas sensing thin film |
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