| MOCVD生长的SiC衬底高迁移率GaN沟道层AlGaN/AlN/GaN HEMT结构 |
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| 引用本文： | 王晓亮,胡国新,马志勇,肖红领,王翠梅,罗卫军,刘新宇,陈晓娟,李建平,李晋闽,钱鹤,王占国. MOCVD生长的SiC衬底高迁移率GaN沟道层AlGaN/AlN/GaN HEMT结构[J]. 半导体学报, 2006, 27(9): 1521-1525 |
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| 作者姓名： | 王晓亮 胡国新 马志勇 肖红领 王翠梅 罗卫军 刘新宇 陈晓娟 李建平 李晋闽 钱鹤 王占国 |
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| 作者单位： | 1. 中国科学院半导体研究所,北京,100083
2. 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 中国科学院知识创新工程项目，国家自然科学基金，国家重点基础研究发展计划(973计划)，国家高技术研究发展计划(863计划) |
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| 摘 要： | 用MOCVD技术在高阻6H-SiC衬底上研制出了具有高迁移率GaN沟道层的AlGaN/AlN/GaN高电子迁移率晶体管(HEMT)结构材料,其室温和80K时二维电子气迁移率分别为1944和11588cm2/(V·s),相应二维电子气浓度为1.03×1013cm-2;三晶X射线衍射和原子力显微镜分析表明该材料具有良好的晶体质量和表面形貌,10μm×10μm样品的表面粗糙度为0.27nm.用此材料研制出了栅长为0.8μm,栅宽为1.2mm的HEMT器件,最大漏极饱和电流密度和非本征跨导分别为957mA/mm和267mS/mm.
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| 关 键 词： | AlGaN/GaN 高电子迁移率管 MOCVD 功率器件 碳化硅衬底 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-05-11 |
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC |
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| Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, Luo Weijun, Liu Xinyu, Chen Xiaojuan, Li Jianping, Li Jinmin, Qian He, Wang Zhanguo. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. Journal of Semiconductors, 2006, In Press. Wang X L, Hu G X, Ma Z Y, Xiao H L, Wang C M, Luo W J, Liu X Y, Chen X J, Li J P, Li J M, Qian H, Wang Z G. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. Chin. J. Semicond., 2006, 27(9): 1521.Export: BibTex EndNote |
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| Authors: | Wang Xiaoliang Hu Guoxin Ma Zhiyong Xiao Hongling Wang Cuimei Luo Weijun Liu Xinyu Chen Xiaojuan Li Jianping Li Jinmin Qian He Wang Zhanguo |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V · s) at room temperature and 11588cm2/(V· s) at 80K with almost equal 2DEG concentrations of about 1.03 × 1013 cm-2 High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0. 27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained. |
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| Keywords: | AlGaN/GaN HEMT MOCVD power device SiC substrates |
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