| AlGaN/GaN HEMT二维静态模型与模拟 |
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| 引用本文： | 薛丽君,夏洋,刘明,王燕,邵雪,鲁净,马杰,谢常青,余志平.AlGaN/GaN HEMT二维静态模型与模拟[J].半导体学报,2006,27(2). |
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| 作者姓名： | 薛丽君 夏洋 刘明 王燕 邵雪 鲁净 马杰 谢常青 余志平 |
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| 作者单位： | 1. 中国科学院微电子研究所,北京,100029
2. 清华大学微电子研究所,北京,100084 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，中国科学院资助项目 |
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| 摘 要： | 考虑AlGaN/GaN材料的自发、压电极化效应和量子效应,通过泊松方程、薛定谔方程和流体力学方程组的数值自洽求解方法,对AlGaN/GaN HEMT的二维静态模型与模拟问题进行了研究,得到了器件区域的导带图、二维电子气分布、电子温度特性、直流输出和转移特性,并对模拟结果进行了分析与讨论.
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| 关 键 词： | AlGaN/GaN高电子迁移率晶体管 二维模型与模拟 极化电荷 量子效应 |
Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT |
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| Xue Lijun,Xia Yang,Liu Ming,Wang Yan,Shao Xue,Lu Jing,Ma Jie,Xie Changqing,Yu Zhiping.Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT[J].Chinese Journal of Semiconductors,2006,27(2). |
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| Authors: | Xue Lijun Xia Yang Liu Ming Wang Yan Shao Xue Lu Jing Ma Jie Xie Changqing Yu Zhiping |
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| Abstract: | AlGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schrodinger-Poisson-hydrodynamic (HD) systems. The influences of polarization charge and quantum effects are considered in this model. Then the two-dimensional conduction band and electron distribution,electron temperature characteristics, Id versus Vd and Id versus Vg, transfer characteristics and transconductance curves are obtained. Corresponding analysis and discussion based on the simulation results are subsequently given. |
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| Keywords: | AlGaN/GaN HEMT 2D modeling and simulation polarization charges quantum effects |
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