| 使用超声搅拌实现精密KOH各向异性体硅腐蚀 |
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| 引用本文： | 陈兢,刘理天,李志坚,谭智敏,蒋前哨,方华军,徐扬,刘燕翔.使用超声搅拌实现精密KOH各向异性体硅腐蚀[J].半导体学报,2002,23(4):362-366. |
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| 作者姓名： | 陈兢 刘理天 李志坚 谭智敏 蒋前哨 方华军 徐扬 刘燕翔 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084 |
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| 摘 要： | 对使用超声搅拌和不加搅拌时(100)单晶硅的腐蚀特性进行了研究和对比.使用超声搅拌,可以得到光滑的、无小丘的腐蚀表面,整个硅片腐蚀深度的误差不超过1μm.实验结果表明,该方法可以有效地实现精密KOH各向异性体硅腐蚀.
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| 关 键 词： | MEMS 各向异性腐蚀 超声搅拌 KOH 表面粗糙度 均匀性 腐蚀速率 |
Precision Bulk Micromachining Based on KOH Anisotropic Etching Using Ultrasonic Agitation |
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| Chen Jing,Liu Litian,Li Zhijian,Tan Zhimin,Jiang Qianshao,Fang Huajun,Xu Yang and Liu Yanxiang.Precision Bulk Micromachining Based on KOH Anisotropic Etching Using Ultrasonic Agitation[J].Chinese Journal of Semiconductors,2002,23(4):362-366. |
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| Authors: | Chen Jing Liu Litian Li Zhijian Tan Zhimin Jiang Qianshao Fang Huajun Xu Yang and Liu Yanxiang |
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| Abstract: | Ultrasonic agitation is introduced to reduce the surface roughness and improve the etching uniformity in the process of most commonly used KOH anisotropic etching.Etching characteristics of (100) Si are studied and compared with that without agitation source.Smooth pyramid-free surfaces are obtained with the uniform etching depth within the resolution of 1μm on the same wafer being achieved at the same time.The results reveal that the ultrasonic agitation is a very efficient approach for high precision bulk micromachining. |
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| Keywords: | MEMS anisotropic etching ultrasonic agitation KOH surface roughness uniformity etching rat |
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