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| n沟VDMOSFET单粒子烧毁的二维数值模拟 | |
| 引用本文： | 郭红霞,陈雨生,张义门,王伟,赵金龙,周辉.n沟VDMOSFET单粒子烧毁的二维数值模拟[J].核电子学与探测技术,2004,24(6):608-611. |
| 作者姓名： | 郭红霞 陈雨生 张义门 王伟 赵金龙 周辉 |
| 作者单位： | 1. 西北核技术研究所,陕西西安69信箱13分箱,710024;西安电子科技大学微电子所,陕西西安,710071 2. 西北核技术研究所,陕西西安69信箱13分箱,710024 3. 西安电子科技大学微电子所,陕西西安,710071 |
| 摘 要： | 应用半导体器件二维模拟软件Medici对功率MOSFET器件单粒子烧毁SEB(Single Event Burnout)效应开展了理论模拟研究。理论模拟与以往的实验结果比较吻合，证明采取的物理模型的正确性。得到了SEB灵敏度与载流子浓度、基区宽度和发射结掺杂浓度等参数的变化关系，提出了改善SEB的几种加固措施。该模型对于评估器件SEB效应提供了理论方法。 |
| 关 键 词： | VDMOSFET 二维数值模拟 发射结 基区 功率MOSFET 半导体器件 理论模拟 单粒子 变化关系 证明 |
| 文章编号： | 0258-0934(2004)06-0608-04 |
| 修稿时间： | 2003年9月6日 |
Two-dimensional numerical simulation of the effect of single event burnout for n-channel VDMOSFET |
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| GUO Hong-xia,CHEN Yu-sheng,ZHANG Yi-men,WANG Wei,ZHAO Jin-long,ZHOU Hui.Two-dimensional numerical simulation of the effect of single event burnout for n-channel VDMOSFET[J].Nuclear Electronics & Detection Technology,2004,24(6):608-611. | |
| Authors: | GUO Hong-xia CHEN Yu-sheng ZHANG Yi-men WANG Wei ZHAO Jin-long ZHOU Hui |
| Abstract: | 2D MEDICI simulator is used to investigate the effect of Single Event Burnout (SEB) for n-channel power VDMOSFETs. The simulation results are consistent with experimental results which have been published. The simulation results are of great interest for a better understanding of the occurrence of events. The effects of the minority carrier lifetime in the base region, the base width and the emitter doping density on SEB susceptibility are verified. Some hardening solutions to SEB are provided. The work shows that the 2D simulator MEDICI is an useful tool for burnout prediction and for the evaluation of hardening solutions. |
| Keywords: | VDMOS single event burnout numerical simulation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |
