Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs |
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| Authors: | Jon Geist Deane Chandler-Horowitz A M Robinson C R James |
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| Affiliation: | National Institute of Standards and Technology, Gaithersburg, MD 20899;University of Alberta, Alberta, Canada, T6G 2G7 |
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| Abstract: | The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface. |
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| Keywords: | high accuracy internal quantum efficiency PC-1D photodiode modeling silicon photodiodes |
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