| Al2O3 绝缘栅SiC MIS 结构基本特性的研究 |
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| 引用本文： | 刘莉,杨银堂,马晓华.Al2O3 绝缘栅SiC MIS 结构基本特性的研究[J].科学通报,2011,56(11):822-827. |
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| 作者姓名： | 刘莉 杨银堂 马晓华 |
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| 作者单位： | 西安电子科技大学微电子学院教育部宽禁带半导体材料与器件重点实验室;西安电子科技大学技术物理学院; |
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| 基金项目： | 西安电子科技大学2010年校内基本科研业务费资助项目(K50510250008) |
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| 摘 要： | 采用原子层淀积(ALD)方法在4H-SiC(0001)8°N-/N+外延层上制备了超薄(~4 nm)Al2O3 绝缘栅高介电常数SiC MIS 电容. 通过对Al2O3 介质膜以及Al2O3/SiC 界面微结构和电学特性 分析表明, 实验所得Al2O3 介质膜具有较好的体特性和界面特性, Al2O3 薄膜的击穿电场为25 MV/cm, 并且在可以接受的界面态密度(2×1013 cm-2)下具有较小的栅泄漏电流(8 MV/cm 电场 下漏电流密度为1×10-3 A/cm-2). 电流-电压测试分析表明, 在FN 隧穿条件下, SiC/Al2O3 之间的 势垒高度为1.4 eV, 已达到制作SiC MISFET 器件的要求. 同时, 在整个栅压区域也受 Frenkel-Poole 和Schottky 机制的共同影响.
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| 关 键 词： | Al2O3 SiC MIS 电容 栅泄漏电流 C-V 特性 |
| 收稿时间： | 2010-12-03 |
Fundamental characteristics of SiC MIS structure with Al_2O_3 as gate dielectric |
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| LIU Li,YANG YinTang,MA XiaoHua.Fundamental characteristics of SiC MIS structure with Al_2O_3 as gate dielectric[J].Chinese Science Bulletin,2011,56(11):822-827. |
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| Authors: | LIU Li YANG YinTang MA XiaoHua |
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| Affiliation: | 1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China;
2 School of Technical Physics, Xidian University, Xi’an 710071, China |
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| Abstract: | SiC MIS structure with ultra-thin Al2O3 as gate dielectric deposited by atomic layer deposition (ALD) on epitaxial layer of 4H-SiC(0001)8°N-/N+ substrate is fabricated. The microstructure and electrical characteristics analysis on the film and Al2O3/SiC interface has shown that Al2O3 deposited has a good bulk characteristics and a good quality between Al2O3 and SiC. The breakdown electrical field of Al2O3 film is 25 MV/cm; the MIS capacitor has a fairly low gate leakage current (current density of 1×10-3A/cm-2 with a electric field of 8 MV/cm) under acceptable interface effective charge (2×1013 cm-2). Current-voltage measurement and analysis has shown that when the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al2O3 is 1.4 eV, which can meet the requirement of SiC MISFET devices. Besides this, the gate leakage current is co-influenced by both of Frenkel-Poole mechanism and Schottky emission. |
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| Keywords: | Al2O3 SiC MIS capacitor gate leakage current C-V characteristics |
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