Tensile strain ultra thin body SiGe on insulator through hetero-layer transfer technique |
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| Affiliation: | 1. Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;2. Division for International Advanced Research and Education (DIARE), Tohoku University, 6-3, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan;3. Japan Society for the Promotion of Science Research Fellow for Young Scientists, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan;1. Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich CH-8093, Switzerland;2. Electron Microscopy Center Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland;3. Institute for Scientific Computing, Technische Universität Dresden, Willers-Bau B – Zellescher Weg 12-14, Dresden D-01062, Germany;4. CSEM, Rue Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerland;5. Department of Condensed Matter Physics, Masaryk University, Kotlá?ská 2, CZ-61137 Brno, Czech Republic;6. CEITEC, Masaryk University, Kamenice 5, CZ-60177 Brno, Czech Republic;7. L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, I-20125 Milano, Italy;8. L-NESS and Department of Physics, Politecnico di Milano and IFN-CNR, Via Anzani 42, I-22100 Como, Italy;1. Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;2. Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan;1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531 Japan;2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya, Tokyo, 158-0082 Japan;1. Graduate School of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;2. Research Centre for Micro-Nano Technology, Hosei University, 3-11-15 Midori-cho, Koganei, Tokyo 184-0003, Japan |
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| Abstract: | The ultra thin body (UTB) SiGe on insulator (SGOI) substrate with body thickness of only 5 nm has been fabricated by hetero-layer transfer technique with highly selective wet etching. According to Raman spectroscopy, UTB-SiGe layer with Ge fraction of 67% and +1% partially tensile strain was transferred onto the SiO2/Si host substrate without the strain degradation. To present the feasibility of UTB-SGOI substrate, a well-behaved performance of 2-μm-gate-length normally off UTB-SGOI nMOSFET has also been demonstrated. |
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| Keywords: | SiGe SGOI Strain Layer transfer UTB MOSFETs |
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