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有源忆阻器伏安曲线与电路频率之间的关系
引用本文:王殿学.有源忆阻器伏安曲线与电路频率之间的关系[J].辽东学院学报(自然科学版),2015(1):33-38.
作者姓名:王殿学
作者单位:辽东学院机电学院,辽宁丹东,118003
摘    要:忆阻器是具有记忆特性非线性电阻器,是现实的第四种基本二端电路元件。文章以光滑三次型非线型函数描述的有源磁控忆阻器模型为例,利用Multisim计算机仿真软件,进一步研究有源忆阻器伏安曲线与电路频率之间关系,讨论有源忆阻器输入电流的突变特性。结果表明:由光滑三次型非线型函数的有源磁控忆阻器模型构成的电路具有边界效应,电流具有突变特性。

关 键 词:有源忆阻器  伏安曲线  边界效应  电流突变

Relationship between Voltage-current Curve and Circuit Frequency of an Active Memristor
WANG Dian-xue.Relationship between Voltage-current Curve and Circuit Frequency of an Active Memristor[J].Journal of Liaodong University:Natural Sciences,2015(1):33-38.
Authors:WANG Dian-xue
Affiliation:WANG Dian-xue;College of Mechanical and Electronic Engineering,Eastern Liaoning University;
Abstract:With the active magnetic control memristor model described with smooth thrice non- linear function as an example,the relationship between the voltage- current curve and circuit frequency of an active memristor was further studied with Multisim. The saltation characteristic of input current of an active memristor is also discussed.The result shows that there is boundary effect in the circuit constituted with the active magnetic control model described with smooth thrice non- linear function. The current of the circuit has saltation characteristic.
Keywords:active memristor  voltage-current curve  boundary effect  current saltation
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